High Performance Aln Aluminium Nitride Metallized Ceramic Substrate for Power Electronics

Product Details
Customization: Available
Application: Electronic Devices, Lighting, Power Supply, Semiconductors
Conductive Layer: Thick Copper Layer
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Registered Capital
1000000 RMB
Plant Area
20000 square meters
  • High Performance Aln Aluminium Nitride Metallized Ceramic Substrate for Power Electronics
  • High Performance Aln Aluminium Nitride Metallized Ceramic Substrate for Power Electronics
  • High Performance Aln Aluminium Nitride Metallized Ceramic Substrate for Power Electronics
  • High Performance Aln Aluminium Nitride Metallized Ceramic Substrate for Power Electronics
  • High Performance Aln Aluminium Nitride Metallized Ceramic Substrate for Power Electronics
  • High Performance Aln Aluminium Nitride Metallized Ceramic Substrate for Power Electronics
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  • Overview
  • Product Introduction
  • Production Process
  • Product Recommendations
Overview

Basic Info.

Model NO.
Customized
Material
AlN
Process
Direct Bonded Copper
Thickness
Customized
Feature
High Current Capacity and Heat Dissipation
Copper Thickness
100-600um
Use Temperature
300-400ºC
Other Available Material
Al2O3
Other Available Process
Mo-Mn Metallization
Transport Package
Vacuum Packaging
Specification
According to the Drawing
Trademark
JingHui
Origin
China
HS Code
8547100000
Production Capacity
50000 PCS/Month

Packaging & Delivery

Package Size
27.00cm * 17.00cm * 20.00cm
Package Gross Weight
2.000kg

Product Description

High Performance AlN Aluminium Nitride Metallized Ceramic Substrate for Power Electronics

Product Introduction

Metallized ceramic substrates are key components in power electronic modules. They connect and fix multiple semiconductor devices such as SiC MOSFETs, Si IGBTs and Si diodes. The ceramic substrate acts as an insulating layer, while the metallization layer ensures its excellent electrical and thermal conductivity. Its excellent thermal and mechanical properties are essential for efficient heat dissipation, ensuring reliable operation of the module under thermal cycling conditions.

Metallized aluminum nitride ceramic substrates are ideal for high-power, high-frequency electronic devices by combining the excellent thermal conductivity of AlN with the electrical conductivity of the metal layer. 

Main Advantages

1. Ultra-high thermal conductivity, solving the heat dissipation bottleneck of high-power devices.
2. Good electrical insulation, suitable for high-voltage environments.
3. Lightweight (density 3.26 g/cm³), better than copper substrates.

High Performance Aln Aluminium Nitride Metallized Ceramic Substrate for Power Electronics

Production Process

Metallization is the process of forming a strong metal layer (such as Cu, Au, Ag or Al) on the surface of AlN ceramics to achieve circuit connection and welding. Common methods:

(1) Direct copper bonding (DBC)

Process: Bond copper foil (usually 100-300μm) directly to the AlN surface at high temperature (1065°C) to form a Cu/AlN/Cu sandwich structure.
Features: High thermal conductivity and high current carrying capacity, but the oxygen content must be strictly controlled to avoid interface oxidation.

(2) Thin film metallization

Process: Deposit Ti/Pt/Au or Cr/Cu thin films on the AlN surface by sputtering or evaporation, and then thicken them by electroplating.
Features: High precision (line width can reach μm level), suitable for high-frequency microwave devices.

(3) Thick film printing

Process: Screen print Ag-Pd or Au slurry, and form a conductive layer after high-temperature sintering (850°C).
Features: Low cost, but slightly inferior to DBC in thermal conductivity and adhesion.

(4) Active Metal Brazing (AMB)

Process: Use a brazing material (such as Ag-Cu-Ti) containing active elements (Ti, Zr) to weld metal layers under vacuum.
Features: High bonding strength, suitable for high reliability applications.

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High Performance Aln Aluminium Nitride Metallized Ceramic Substrate for Power Electronics
High Performance Aln Aluminium Nitride Metallized Ceramic Substrate for Power Electronics
High Performance Aln Aluminium Nitride Metallized Ceramic Substrate for Power Electronics
 

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