Customization: | Available |
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Application: | Refractory, Depends on Customer′s Design, Structure Ceramic, Industrial Ceramic |
Type: | Ceramic Plates |
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With the development of third-generation semiconductor (including GaN, SiC, AlN, etc.) technology, power devices have begun to develop rapidly in
the fields of semiconductor lighting, power electronics, microwave radio frequency, 5G communication and new energy vehicles, and the demand for
ceramic substrates has surged.
There are many metallization methods on the surface of ceramic substrates, among which the Mo-Mn method is widely used because of its mature
and stable process. And it is also the most important one in the metal powder sintering method.
The Mo-Mn method is to directly sinter metal powder on the surface of the ceramic substrate to form a metal film. The metal powder used in this
method is usually a refractory metal (such as W, Mo) powder, and a small amount of metal with a lower melting point (such as Fe, Mn or Ti) powder.
The earliest invented metal powder formula is W-Fe mixed powder, and now the commonly used formula is Mo-Mn mixed powder, which is more
adaptable.
The following is the general process of the molybdenum-manganese method applied to the surface of the ceramic substrate.
Jinghui has more than 10 years of experience in R&D and production of metallized ceramic substrates, and has proofing and mass production
capabilities. We continuously promote the improvement and advancement of processes, facilities and equipment, actively seek new opportunities for
advanced material technologies, and assist customers in creating new operational value. You are welcome to consult us for business.