Aluminum Nitride Ceramic Thermal Pads for Mosfet Transistor IGBT

Product Details
Customization: Available
Application: Refractory, Structure Ceramic, Industrial Ceramic, Semiconductor
Type: Ceramic Plates
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Plant Area
20000 square meters
  • Aluminum Nitride Ceramic Thermal Pads for Mosfet Transistor IGBT
  • Aluminum Nitride Ceramic Thermal Pads for Mosfet Transistor IGBT
  • Aluminum Nitride Ceramic Thermal Pads for Mosfet Transistor IGBT
  • Aluminum Nitride Ceramic Thermal Pads for Mosfet Transistor IGBT
  • Aluminum Nitride Ceramic Thermal Pads for Mosfet Transistor IGBT
  • Aluminum Nitride Ceramic Thermal Pads for Mosfet Transistor IGBT
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Overview

Basic Info.

Model NO.
Standard
Color
Grey, or Black
MOQ
1PCS Per Order
Dimensions
as Per Customer Requirement
Thickness
From 0.3mm to 1mm Available
Features
High Thermal Conductivity
Sample
Available
Payment
Negotiation
OEM
Acceptable
Shipping
Express/Air/Sea
Material
Alunimum Nitride
Transport Package
Individual Packaging
Specification
Max. OD to be 400mm
Trademark
JingHui
Origin
China
HS Code
8547100000
Production Capacity
5000/Month

Packaging & Delivery

Package Size
36.00cm * 20.00cm * 24.00cm
Package Gross Weight
8.000kg

Product Description

Aluminum Nitride Ceramic Thermal Pads for MOSFET Transistor IGBT
 
Product Description
Aluminum Nitride Ceramic Thermal Pads for Mosfet Transistor IGBT
1. High thermal conductivity (170 ~220) W/m.k,  it's 5~8.5 times higher than that of alumina


2. Similar coefficient of thermal expansion to that of silicon (Si), it helps to achieve high reliability of Si chip


3. High insulation resistance and voltage resistance strength, but low dielectric constant and dielectric loss


4. High mechanical strength, it's up to 450MPa and very dense ceramic body free of porosity


5. It offers very high purity up to 99%, also it's free of toxicity and meets RoHS, REACH regulation


The specification of ceramic wafers and substrate

Material
 
Aluminum nitride (AlN), alumina(al2o3)
Color
 
Gray, white
Typical thickness
 
0.6mm and 1.0mm
Dimensional capability
 
Max. side-length to be 500mm by 400mm, Max OD to be 400mm
Tolerance 
 
OD can be ± 0.01mm, Thickness can be ± 0.005mm

Surface treatment

natural surface, lapping, diamond-like polishing, metallization

Remark:
We produce a selection of ceramic wafers in different materials, customized designs, including alumina ceramic wafers, zirconia ceramic wafers, silicon nitride ceramic wafers, and silicon carbide wafers.


The description of the AlN ceramic thermal pad
The aluminum nitride ceramic thermal pad offers a super high thermal conductivity of more than 170W/m. K, high resistivity, low dielectric loss, good insulation, and some other excellent properties. The ALN wafer is the best choice for a wide range of industrial insulating heat sink material of high power machinery and equipment such as high-frequency equipment substrate, high power transistor module substrate, high-density hybrid circuits, microwave power devices, power semiconductor devices, power electronic devices, optoelectronic components, laser-semi-conductor, LED, IC products, and so on.

AlN substrate can be the best solution in electronics applications where strict conditions are required, such as power modules (MOSFET, IGBT), LED packages for cooling and protecting circuits, packages, and modules.

 

Why choose us?

1. 10+ Years of manufacturing experience in OEM, ODM, and trusted & professional teams

2. Powerful R&D, prototyping & mass production capability to support trial order and high volume production

3. In-house comprehensive manufacturing types of equipment from raw materials to high precision machining

4. Rigorous quality control system and processes, including IQC, IPQC, QA, OQC in working instructions

5. Surpassing pre-sales, sales, and after-sales service abide all orders every customer as the first priority

Aluminum Nitride Ceramic Thermal Pads for Mosfet Transistor IGBT

Products category
Aluminum Nitride Ceramic Thermal Pads for Mosfet Transistor IGBT
Aluminum Nitride Ceramic Thermal Pads for Mosfet Transistor IGBT
Aluminum Nitride Ceramic Thermal Pads for Mosfet Transistor IGBT
Certifications

Aluminum Nitride Ceramic Thermal Pads for Mosfet Transistor IGBT

Our Partners

Aluminum Nitride Ceramic Thermal Pads for Mosfet Transistor IGBT

FAQ

Q1. Are you a factory or trading company?

A: We are a direct professional manufacturer of technical ceramics. You are welcome to visit our factory.

Q2: Do you send a sample to check?
A: Sure, the free sample with standard design in stock can be supplied, but freight collect.

Q3: When can I get the price?
A: We regularly quote within 24 hours after we get your inquiry. If you are in urgent need of getting the price.
Please call us or tell us in your email so that we will proceed with your inquiry as a priority.

Q4: Is it available to provide customized products?
A: We always support custom-made ceramic sheets as per different materials, dimensions, and designs.

Q5: What other products do you manufacture?
A: Yes, we also produce metalized ceramics, ceramic tubes, zirconia ceramic parts, ceramic seals besides ceramic wafers

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