• Power Devices Heatsink Insulation Pad for MOS Transistor IGBT Transistor
  • Power Devices Heatsink Insulation Pad for MOS Transistor IGBT Transistor
  • Power Devices Heatsink Insulation Pad for MOS Transistor IGBT Transistor
  • Power Devices Heatsink Insulation Pad for MOS Transistor IGBT Transistor
  • Power Devices Heatsink Insulation Pad for MOS Transistor IGBT Transistor
  • Power Devices Heatsink Insulation Pad for MOS Transistor IGBT Transistor

Power Devices Heatsink Insulation Pad for MOS Transistor IGBT Transistor

Application: Refractory, Structure Ceramic, Industrial Ceramic, Insulation Ceramic
Material: Alumina Ceramic
Type: Ceramic Parts
Samples:
US$ 0.5/Piece 1 Piece(Min.Order)
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Power Devices Heatsink Insulation Pad for MOS Transistor IGBT Transistor pictures & photos
Power Devices Heatsink Insulation Pad for MOS Transistor IGBT Transistor
US $0.1-0.3 / Piece
Min. Order: 100 Pieces
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Rating: 5.0/5
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  • Overview
  • Product Description
  • The specification
  • Typical Applications
  • Why choose us?
  • Certifications
  • Our Partners
Overview

Basic Info.

Model NO.
Standard
Product Name
Alumina Ceramic Thermal Pad
Grade of Material
95% Alumina or Aluminum Nitride
Color
White, Gray
Feature
High Insulation, High Mechanical Strength
About Pictures
for Reference Only
About The Quotation
Please Contact Us for a Quote Based on Actual Prod
Transport Package
Individual Packaging
Specification
Max. 800mm mmx 1000mm x 30mm
Trademark
JingHui
Origin
China
HS Code
8547100000
Production Capacity
500000PCS/Month

Packaging & Delivery

Package Size
36.00cm * 20.00cm * 24.00cm
Package Gross Weight
8.000kg
Lead Time
3 days (1 - 5000 Pieces)
To be negotiated ( > 5000 Pieces)

Product Description

Power Devices Heatsink Insulation Pad for MOS Transistor IGBT Transistor
 

Product Description

Power Devices Heatsink Insulation Pad for MOS Transistor IGBT Transistor
Ceramic pad for Mosfet TO packaging is made of 95% alumina (al2o3) which is an engineered ceramic.  It offers high thermal conducitivity up to 24 W/m.K. Therefore, the ceramic pad could quickly transfer the heat of IC generated to outside and ensure the chips reliability. 


The visual quality of alumina ceramic pad is vital at assemble process, Thus, deburr and polishing process will be manipulated before shipping, and then ensure the surface smooth free of any burrs. 


Besides, alumina ceramic pad in the application could offer other strengths, such as wonderful electrical insulation  high mechanical strength and corrosion resistance. The ceramic pad could significantly prolong the TO packaging service lifespan.

 

The specification

We have been producing various of standard alumina ceramic pads for MOS TO packaging, refer to the following table in detail:
 

S/N Figure Type Size
1
 
Power Devices Heatsink Insulation Pad for MOS Transistor IGBT Transistor
 
For TO-220 20mm *14mm * 1mm with φ5mm hole
2 For TO-220 18.5mm * 12mm * 1mm with φ3.8mm hole
3 For TO-247 22mm * 17mm * 1mm with φ3.7mm hole
4 For TO-264 28mm * 22mm * 1mm with 3.4mm hole
5 For TO-3P 25mm * 20mm * 1mm with φ4mm hole

Remark:   0.6mm thick alumina ceramic pads are standard parts.
 

Typical Applications


These alumina ceramic pads are widely used in MOS/IC/triode, diode & IGBT,  high frequency communication devices, high density switching power supply, and high frenquency welding machines, and so on. 

Why choose us?

We have integrated production lines from raw material formulating, shaping, sintering and secondary process at house, hence, we could control the consistency of quality and manufacturing cost well. Power Devices Heatsink Insulation Pad for MOS Transistor IGBT Transistor

Certifications

Power Devices Heatsink Insulation Pad for MOS Transistor IGBT Transistor

Our Partners

Power Devices Heatsink Insulation Pad for MOS Transistor IGBT Transistor


If you are looking for ceramic pads for your Mosfet TO package,  please feel free to call us or email to us. We'll be there anytime.

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From payment to delivery, we protect your trading.
Power Devices Heatsink Insulation Pad for MOS Transistor IGBT Transistor pictures & photos
Power Devices Heatsink Insulation Pad for MOS Transistor IGBT Transistor
US $0.1-0.3 / Piece
Min. Order: 100 Pieces
Diamond Member Since 2020

Suppliers with verified business licenses

Secured Trading Service
Rating: 5.0/5
Manufacturer/Factory, Trading Company, Group Corporation
Registered Capital
1000000 RMB
Plant Area
>2000 square meters