• Direct Bonded Copper Dbc Metallization of Aluminum Nitride Ceramic Substrate
  • Direct Bonded Copper Dbc Metallization of Aluminum Nitride Ceramic Substrate
  • Direct Bonded Copper Dbc Metallization of Aluminum Nitride Ceramic Substrate
  • Direct Bonded Copper Dbc Metallization of Aluminum Nitride Ceramic Substrate
  • Direct Bonded Copper Dbc Metallization of Aluminum Nitride Ceramic Substrate
  • Direct Bonded Copper Dbc Metallization of Aluminum Nitride Ceramic Substrate

Direct Bonded Copper Dbc Metallization of Aluminum Nitride Ceramic Substrate

Application: Laser Diode (Ld)
Finished Product: Ceramic Circuit Board
Substrate Material: Aluminum Nitride (Aln) Ceramic
Surface Metallization Process: Direct Bonded Copper (Dbc / Dcb)
Feature: Strong Bonding Strength Between Ceramic and Metal
Transport Package: Vacuum Packaging
Customization:
Diamond Member Since 2020

Suppliers with verified business licenses

Rating: 5.0/5
Manufacturer/Factory, Trading Company, Group Corporation
  • Overview
  • Product Introduction
  • Production Process
  • Our Advantages
  • Product Inspection
Overview

Basic Info.

Model NO.
Customized
Specification
According to the Drawing
Trademark
JingHui
Origin
China
HS Code
8547100000

Product Description

Direct Bonded Copper DBC Metallization of Aluminum Nitride Ceramic Substrate

Product Introduction

What is Direct Bonded Copper (DBC) technology?

Direct Bonded Copper (DBC) technology is a metallization method of bonding copper foil on the ceramic surface (mainly Al2O3 and AlN). The basic

principle is to introduce oxygen element between Cu and ceramic, then form Cu/O eutectic liquid phase at 1065-1083°C, and then react with ceramic

substrate and copper foil to form CuAlO2 or Cu(AlO2)2, and realize the bonding between copper foil and substrate under the action of mesophase. 


Because AlN belongs to non-oxide ceramics, the key to surface copper coating is to form an Al2O3 transition layer on its surface, and realize the

effective bonding between the copper foil and the base ceramic under the action of the transition layer.


What are the Characteristics of Direct Bonded Copper (DBC) technology?

You will learn more about DBC through the following two tables.


Direct Bonded Copper Dbc Metallization of Aluminum Nitride Ceramic SubstrateDirect Bonded Copper Dbc Metallization of Aluminum Nitride Ceramic Substrate

Production Process

The DBC method uses a high-temperature melting and diffusion process to bond the ceramic substrate and high-purity oxygen-free copper together.

The formed metal layer has good thermal conductivity, high adhesion strength, excellent mechanical properties, easy etching, high insulation and

high thermal cycle capacity.

Direct Bonded Copper Dbc Metallization of Aluminum Nitride Ceramic Substrate

Our Advantages

DBC ceramic substrates are widely used in the packaging and heat dissipation of Insulated Gate Bipolar Transistor (IGBT), Laser Diode (LD) and

Concentrator Photovoltaics (CPV). Jinghui strictly controls the eutectic temperature and oxygen content in the process of producing DBC ceramic

substrates. The DBC technology has reached the industry-leading level and is worthy of your trust.

Direct Bonded Copper Dbc Metallization of Aluminum Nitride Ceramic Substrate

Product Inspection

In order to ensure the best performance of our ceramic circuit boards, All products have to pass strict inspection before they go out.

Direct Bonded Copper Dbc Metallization of Aluminum Nitride Ceramic Substrate

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Diamond Member Since 2020

Suppliers with verified business licenses

Rating: 5.0/5
Manufacturer/Factory, Trading Company, Group Corporation
Registered Capital
1000000 RMB
Plant Area
>2000 square meters