• Direct Bond Copper Dbc Metallization High Performance Aln Aluminium Nitride Substrate
  • Direct Bond Copper Dbc Metallization High Performance Aln Aluminium Nitride Substrate
  • Direct Bond Copper Dbc Metallization High Performance Aln Aluminium Nitride Substrate
  • Direct Bond Copper Dbc Metallization High Performance Aln Aluminium Nitride Substrate
  • Direct Bond Copper Dbc Metallization High Performance Aln Aluminium Nitride Substrate
  • Direct Bond Copper Dbc Metallization High Performance Aln Aluminium Nitride Substrate

Direct Bond Copper Dbc Metallization High Performance Aln Aluminium Nitride Substrate

Application: Laser Diode (Ld)
Finished Product: Ceramic Circuit Board
Substrate Material: Aluminium Nitride (Aln) Ceramic
Surface Metallization Process: Direct Bond Copper (Dbc / Dcb)
Feature: Strong Bonding Strength Between Ceramic and Metal
Transport Package: Vacuum Packaging
Customization:
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  • Overview
  • Product Introduction
  • Production Process
  • Our Advantages
  • Product Inspection
Overview

Basic Info.

Model NO.
Customized
Specification
According to the Drawing
Trademark
JingHui
Origin
China
HS Code
8547100000

Product Description

Direct Bond Copper DBC Metallization High Performance AlN Aluminium Nitride Substrate
 

Product Introduction

What is Direct Bond Copper (DBC) technology?

Direct Bond Copper (DBC) technology is a metallization method of bonding copper foil on the ceramic surface (mainly Al2O3 and AlN). The basic principle is to introduce oxygen element between Cu and ceramic, then form Cu/O eutectic liquid phase at 1065-1083°C, and then react with ceramic substrate and copper foil to form CuAlO2 or Cu(AlO2)2, and realize the bonding between copper foil and substrate under the action of mesophase. 

Because AlN belongs to non-oxide ceramics, the key to surface copper coating is to form an Al2O3 transition layer on its surface, and realize the effective bonding between the copper foil and the base ceramic under the action of the transition layer.


What are the Characteristics of DBC technology?

You will learn more about DBC through the following two tables.


Direct Bond Copper Dbc Metallization High Performance Aln Aluminium Nitride Substrate
Direct Bond Copper Dbc Metallization High Performance Aln Aluminium Nitride Substrate
 

Production Process

The DBC method uses a high-temperature melting and diffusion process to bond the ceramic substrate and high-purity oxygen-free copper together.

The formed metal layer has good thermal conductivity, high adhesion strength, excellent mechanical properties, easy etching, high insulation and high thermal cycle capacity.


Direct Bond Copper Dbc Metallization High Performance Aln Aluminium Nitride Substrate
 

Our Advantages

DBC ceramic substrates are widely used in the packaging and heat dissipation of Insulated Gate Bipolar Transistor (IGBT), Laser Diode (LD) and Concentrator Photovoltaics (CPV). Jinghui Ceramic strictly controls the eutectic temperature and oxygen content in the process of producing DBC ceramic substrates. The DBC technology has reached the industry-leading level and is worthy of your trust.
 

Direct Bond Copper Dbc Metallization High Performance Aln Aluminium Nitride Substrate

Product Inspection

In order to ensure the best performance of our ceramic circuit boards, all products have to pass strict inspection before they go out.

Direct Bond Copper Dbc Metallization High Performance Aln Aluminium Nitride Substrate

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